16GB DDR5-6400 RDIMM 1RX8 1.1V
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The Samsung M321R2GA3EB2-CCP is an enterprise-grade 16GB DDR5-6400 (PC5-51200) single-rank (1Rx8) Registered DIMM engineered for high-bandwidth server workloads. Built on Samsung advanced E-die DRAM, it operates at a nominal 1.1V, delivering maximum energy efficiency and exceptional data integrity. This module is ideal for high-performance computing, virtualization, and next-generation enterprise server platforms requiring native 6400 MT/s memory throughput.
The M321R2GA3EB2-CCP is designed in accordance with JEDEC DDR5 RDIMM specifications, utilizing a 1Rx8 rank topology comprising monolithic 16Gb Samsung E-die chips. DDR5 splits the standard 64-bit data bus into two independent 32-bit subchannels, each augmented with 8 bits of sideband ECC (totaling an 80-bit wide interface). Command, address, and clock signals are buffered by an onboard Registering Clock Driver (RCD) to reduce electrical loading on the host memory controller, enabling stable high-speed signaling at 6400 MT/s.
Power delivery has transitioned from the motherboard to the DIMM via an onboard 12V Power Management IC (PMIC), which precisely steps down and regulates the 1.1V VDD/VDDQ and 1.8V VPP rails. The module integrates an SPD Hub with embedded thermal sensors for precise telemetry. Error management utilizes a dual-tier approach: internal On-Die ECC (ODECC) mitigates internal cell-level bit flips, while sideband ECC across the dual subchannels protects against in-transit bus errors. Decoding the part number: 'M321' denotes a Samsung DDR5 RDIMM, 'R' indicates DDR5 technology, '2G' designates module depth for 16GB capacity, 'E' signifies Samsung E-die silicon, 'B' represents the BGA package type, and 'CCP' identifies the DDR5-6400 speed bin with standard JEDEC timings (CL52).
Always verify against your server's qualified vendor list (QVL).
Yes. The module conforms to JEDEC backward-compatibility specifications and will automatically downclock to DDR5-5600 or DDR5-4800 if constrained by processor memory controller limits or BIOS profiles.
On-Die ECC (ODECC) is internal to the individual DRAM chips to correct bit flips within the die memory cells. Sideband ECC provides system-level error detection and correction (SECDED) across the 40-bit subchannel bus to maintain end-to-end data transmission reliability between the CPU and memory.
Mixing different DRAM organizations (x4 and x8) within the same memory channel is generally not supported or recommended by enterprise server OEMs, as it can disrupt memory interleaving and destabilize channel timing.
The M321R2GA3EB2-CCP is a enterprise server memory module (16GB DDR5-6400 RDIMM 1RX8 1.1V). Sold as factory-sealed OEM stock with a 1-year warranty and same-day US shipping when in stock. We stock 0 units of this SKU today, with 250 more incoming.
Compatible with enterprise servers requiring this exact configuration. Bulk orders welcome — quotes typically returned within one business hour. Payment terms: NET-30 for approved accounts, or instant on-chain payment via USDC/ETH on Base or Ethereum for autonomous AI agents and Web3 buyers.
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